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PD - 94625B
SMPS IGBT
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGP50B60PD1
VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A
Applications
* * * * Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
G E
Features
* * * * * * * NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability
n-channel
Equivalent MOSFET Parameters RCE(on) typ. = 61m ID (FET equivalent) = 50A
Benefits
G
C
E
* Parallel Operation for Higher Current Applications * Lower Conduction Losses and Switching Losses * Higher Switching Frequency up to 150kHz
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFRM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current
Max.
600 75 45 150 150 40 15 60 20 390 156 -55 to +150
Units
V
d
A
Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
e
V W
C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6.0 (0.21)
Max.
0.32 1.7 --- 40 ---
Units
C/W
g (oz)
1
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1/25/06
IRGP50B60PD1
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- -- --
Typ.
-- 0.31 1.7 2.00 2.45 2.60 3.20 4.0 -10 41 5.0 1.0 1.30 1.20 --
Max. Units
-- -- -- 2.35 2.85 2.95 3.60 5.0 -- -- 500 -- 1.70 1.60 100 nA V V
Conditions
VGE = 0V, IC = 500A 1MHz, Open Collector IC = 33A, VGE = 15V IC = 50A, VGE = 15V IC = 33A, VGE = 15V, TJ = 125C IC = 50A, VGE = 15V, TJ = 125C
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/C VGE = 0V, IC = 1mA (25C-125C)
4, 5,6,8,9
RG VCE(on)
Internal Gate Resistance Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
3.0 -- -- -- -- -- -- --
gfe ICES VFM IGES
IC = 250A V mV/C VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 33A, PW = 80s A mA V VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125C IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 125C VGE = 20V, VCE = 0V
7,8,9
10
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related)
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
205 70 30 255 375 630 30 10 130 11 580 480 1060 26 13 146 15 3648 322 56 215 163
Max. Units
308 105 45 305 445 750 40 15 150 15 700 550 1250 35 20 165 20 -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 33A VCC = 400V VGE = 15V
Conditions
Ref.Fig 17 CT1
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 25C
CT3
fAA
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 25C
CT3
fAA f
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125C IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125CAfAA
CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2
16
Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current
g
g
-- --
f = 1Mhz VGE = 0V, VCE = 0V to 480V TJ = 150C, IC = 150A
15
3 CT2
FULL SQUARE -- -- -- -- -- -- 42 74 80 220 4.0 6.5 60 120 180 600 6.0 10 A nC ns
VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s
19
21
19,20,21,22
CT5
Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2
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IRGP50B60PD1
90 80 70 60
IC (A)
450 400 350 300
Ptot (W)
50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 T C (C)
250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
200 180 160 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
100
140
ICE (A)
120 100 80 60 40 20
IC A)
10
1 10 100 1000
0 0 1 2 3 4 5 6 7 8 9 10
VCE (V)
VCE (V)
Fig. 3 - Reverse Bias SOA TJ = 150C; VGE =15V
200 180 160 140
ICE (A)
Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
200 180 160 140
ICE (A)
120 100 80 60 40 20 0 0
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
120 100 80 60 40 20 0
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
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3
IRGP50B60PD1
900 800 700 600
ICE (A)
10 T J = 25C T J = 125C 9 8 7
VCE (V)
500 400 300 200 100 0 0 5 10 VGE (V) 15 20 T J = 125C T J = 25C
6 5 4 3 2 1 0 5 10 VGE (V)
ICE = 15A ICE = 33A ICE = 50A
15
20
Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
10 9 8 7
VCE (V)
I sa t n o sF r adCr e t -I ( ) n t na e u owr ur n A
F
100
Fig. 8 - Typical VCE vs. VGE TJ = 25C
6 5 4 3 2 1 0 5 10 VGE (V)
ICE = 15A ICE = 33A ICE = 50A
10
TJ = 150C TJ = 125C TJ = 25C
1
15
20
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 9 - Typical VCE vs. VGE TJ = 125C
1200 1000 800
Energy (J)
Swiching Time (ns)
1000
Fig. 10 - Maximum. Diode Forward Characteristics tp = 80s
EON 600 EOFF 400 200 0 0 10 20 30 IC (A) 40 50 60
tdOFF
100
tF tdON tR
10 0 10 20 30 40 50 60
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
4
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IRGP50B60PD1
1000 900 800
1000
Energy (J)
EON
700 600 500 400 300 0 5 10 15 20 25
Swiching Time (ns)
tdOFF
100
EOFF
tdON tF tR
0 5 10 15 20 25
10
RG ()
RG ()
Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
40
Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
30
Capacitance (pF)
1000
Eoes (J)
20
Coes
100
10
Cres
0 0 100 200 300 400 500 600 700 VCE (V)
10 0 20 40 60 80 100
VCE (V)
Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE
16 14
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1.4
Normalized V CE(on) (V)
250
12 10
VGE (V)
400V
1.2
8 6 4 2 0 0 50 100 150 200 Q G , Total Gate Charge (nC)
1.0
0.8 -50 0 50 100 150 200 T J (C)
Fig. 17 - Typical Gate Charge vs. VGE ICE = 33A
Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 33A, VGE= 15V
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5
IRGP50B60PD1
100 100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
I F = 30A I F = 30A
60
I IRRM - (A)
t rr - (ns)
I F = 15A
10
IF = 15A
40
I F = 5.0A I F = 5.0A
20 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt
800
1000
VR = 200V TJ = 125C TJ = 25C
600
VR = 200V TJ = 125C TJ = 25C
IF = 30A
di(rec)M/dt - (A/s)
Q RR - (nC)
400
I F = 5.0A I F = 15A I F = 30A
I F = 15A IF = 5.0A
200
0 100
di f /dt - (A/s)
1000
100 100
di f /dt - (A/s)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
6
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IRGP50B60PD1
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 C 2
0.01
0.01 0.02 SINGLE PULSE ( THERMAL RESPONSE )
J
Ri (C/W) i (sec) 0.157 0.000346 0.163 4.28
1
0.001
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10
0.0001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.01 0.02
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.363 0.000112 0.864 0.473 0.001184 0.032264
1
2
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1000
IC, Collector-to-Emitter Current (A)
100
10
100sec
1
0.1
0.01
Tc = 25C Tj = 150C Single Pulse 1 10 100
1msec 10msec 1000 10000
VCE , Collector-to-Emitter Voltage (V)
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Fig. 25 - Forward SOA, TC = 25C; TJ 150C
7
IRGP50B60PD1
L
L
0
DUT 1K
VCC
80 V Rg
DUT
480V
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
PFC diode
L
R=
VCC ICM
DUT / DRIVER
Rg
VCC
Rg
DUT
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
REVERSE RECOVERY CIRCUIT
VR = 200V
0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S
Fig. C.T.5 - Reverse Recovery Parameter Test Circuit
8
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IRGP50B60PD1
600 550 500 450 400 350 VCE (V) 300 250 200 150 100 50 0 -50 -100 -0.20 0.00
Eoff 5% V CE tf 90% ICE
60 50 40 30 20 10 0 -10 0.40
450 400 350 300 250 VCE (V)
ICE (A)
90% ICE
90 80 70 60 50 40 30
5% V CE 10% ICE
tr
TEST CURRENT
200 150 100 50 0
Eon Loss
20 10 0 -10 0.20
5% ICE
0.20
-50 -0.10
0.00
0.10
Time (s)
Time(s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3
3
IF 0
trr ta tb
4
2
Q rr I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. WF3 - Reverse Recovery Waveform and Definitions
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ICE (A)
9
IRGP50B60PD1
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC package is not recommended for Surface Mount Application.
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE
PART NUMBER
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 1/06
10
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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